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10 µm minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor-liquid-solid growth

Putnam, Morgan C. and Turner-Evans, Daniel B. and Kelzenberg, Michael D. and Boettcher, Shannon W. and Lewis, Nathan S. and Atwater, Harry A. (2009) 10 µm minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor-liquid-solid growth. Applied Physics Letters, 95 (16). Art. No. 163116. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20091119-144726009

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Abstract

The effective electron minority-carrier diffusion length, L_(n,eff), for 2.0 µm diameter Si wires that were synthesized by Cu-catalyzed vapor-liquid-solid growth was measured by scanning photocurrent microscopy. In dark, ambient conditions, L_(n,eff) was limited by surface recombination to a value of ≤ 0.7 µm. However, a value of L_(n,eff) = 10.5±1 µm was measured under broad-area illumination in low-level injection. The relatively long minority-carrier diffusion length observed under illumination is consistent with an increased surface passivation resulting from filling of the surface states of the Si wires by photogenerated carriers. These relatively large L_(n,eff) values have important implications for the design of high-efficiency, radial-junction photovoltaic cells from arrays of Si wires synthesized by metal-catalyzed growth processes.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.3247969 DOIArticle
http://link.aip.org/link/?APPLAB/95/163116/1PublisherArticle
ORCID:
AuthorORCID
Boettcher, Shannon W.0000-0001-8971-9123
Lewis, Nathan S.0000-0001-5245-0538
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2009 American Institute of Physics. Received 5 August 2009; accepted 18 September 2009; published 23 October 2009. The authors thank BP, the Department of Energy Office of Basic Energy Sciences, and the Caltech Center for Sustainable Energy Research for support, as well as the Kavli Nanoscience Institute at Caltech, the Molecular Materials Research Center at Caltech, and the Center for the Science of Materials and Engineering NSF MRSEC: DMR 0520565 for use of facilities, and thank Emily Warren, Josh Spurgeon, Brendan Kayes, and Michael Filler for their contributions.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
BPUNSPECIFIED
Department of Energy (DOE)UNSPECIFIED
Caltech Center for Sustainable Energy ResearchUNSPECIFIED
NSFDMR-0520565
Subject Keywords:carrier lifetime, catalysis, copper, elemental semiconductors, optical microscopy, photovoltaic cells, silicon, surface recombination, surface states, wires
Issue or Number:16
Classification Code:PACS: 72.20.Jv; 73.20.At
Record Number:CaltechAUTHORS:20091119-144726009
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20091119-144726009
Official Citation:10 µm minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor-liquid-solid growth Morgan C. Putnam, Daniel B. Turner-Evans, Michael D. Kelzenberg, Shannon W. Boettcher, Nathan S. Lewis, and Harry A. Atwater, Appl. Phys. Lett. 95, 163116 (2009), DOI:10.1063/1.3247969
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:16767
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:08 Dec 2009 18:20
Last Modified:31 Jan 2017 18:40

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