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Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

Jiang, Fan and Stavola, Michael and Rohatgi, A. and Kim, D. and Holt, J. and Atwater, H. and Kalejs, J. (2003) Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si. Applied Physics Letters, 83 (5). pp. 931-933. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:JIAapl03

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Abstract

A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.1598643UNSPECIFIEDUNSPECIFIED
ORCID:
AuthorORCID
Atwater, H.0000-0001-9435-0201
Additional Information:© 2003 American Institute of Physics. Received 12 May 2003; accepted 17 June 2003. The authors thank Mark Rosenblum for his assistance with their experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.
Funders:
Funding AgencyGrant Number
National Renewable Energy LaboratoryAAT-1-31606-04
NSFDMR-0108914
Subject Keywords:SILICON SOLAR-CELLS; CHEMICAL-VAPOR-DEPOSITION; CRYSTALLINE SILICON; SURFACE PASSIVATION; NITRIDE; DISSOCIATION; DIFFUSION
Issue or Number:5
Record Number:CaltechAUTHORS:JIAapl03
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:JIAapl03
Alternative URL:http://dx.doi.org/10.1063/1.1598643
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1677
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:10 Feb 2006
Last Modified:25 Mar 2019 22:31

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