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Low-threshold photonic crystal laser

Lončar, Marko and Yoshie, Tomoyuki and Scherer, Axel and Gogna, Pawan and Qiu, Yueming (2002) Low-threshold photonic crystal laser. Applied Physics Letters, 81 (15). pp. 2680-2682. ISSN 0003-6951. doi:10.1063/1.1511538.

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We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 µW, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polarization characteristics and lithographic tuning properties were found to be in excellent agreement with theoretical predictions.

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Additional Information:© 2002 American Institute of Physics. Received 19 June 2002; accepted 9 August 2002. The authors would like to thank William Green from Caltech for many valuable discussions. This work was supported by the NSF under Grants Nos. ECS-9912039 and DMR-0103134, and the AFOSR Contract No. F49620-01-1-0497. Two of the authors (P.G. and Y.Q.) would like to acknowledge the partial support from the Cross Enterprise Technology Development Program at the Jet Propulsion Laboratory (under a contract with the National Aeronautics and Space Administration).
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)F49620-01-1-0497
Subject Keywords:photonic band gap; laser cavity resonators; quantum well lasers; indium compounds; gallium arsenide; III-V semiconductors; optical pumping; edge dislocations; laser tuning; Q-factor
Issue or Number:15
Record Number:CaltechAUTHORS:LONapl02b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1694
Deposited By: Archive Administrator
Deposited On:12 Feb 2006
Last Modified:08 Nov 2021 19:35

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