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Advanced silicon processing for active planar photonic devices

Shearn, Michael and Diest, Kenneth and Sun, Xiankai and Zadok, Avi and Atwater, Harry and Yariv, Amnon and Scherer, Axel (2009) Advanced silicon processing for active planar photonic devices. Journal of Vacuum Science and Technology B, 27 (6). pp. 3180-3182. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:20100114-152003679

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Abstract

Using high quality, anisotropically etched Si waveguides bonded to InGaAsP, the authors demonstrate a hybrid laser, whose optical profile overlaps both Si and III-V regions. Continuous wave laser operation was obtained up to 45 °C, with single facet power as high as 12.7 mW at 15 °C. Planar Si optical resonators with Q = 4.8 × 10^6 are also demonstrated. By using a SF_6/C_(4)F_8 reactive ion etch, followed by H_(2)SO_4/HF surface treatment and oxygen plasma oxide, the optical losses due to the waveguide and the bonding interface are minimized. Changes of optical confinement in the silicon are observed due to waveguide width variation.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.3256649DOIArticle
http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000027000006003180000001&idtype=cvips&gifs=yesPublisherArticle
ORCID:
AuthorORCID
Atwater, Harry0000-0001-9435-0201
Additional Information:© 2009 AVS. Received 8 July 2009; accepted 5 October 2009; published 7 December 2009. This work was supported by Defense Advanced Research Projects Agency DARPA Contract No. N66001-07-1-2058 and HR0011-04-1-0054, the U.S. Air Force Office of Scientific Research AFOSR Grant No. FA9550-06-1-0480, and the Center for Science and Engineering of Materials, a National Science Foundation NSF Materials Research Science and Engineering Center at Caltech. The authors thank the Kavli Nanoscience Institute, Caltech, for supporting fabrication. M.S. thanks the NSF Graduate Research Fellowship program. A.Z. acknowledges postdoctoral fellowships from the Center for the Physics of Information, Caltech, and the Rothschild fellowship from Yad-Hanadiv Foundation, Israel.
Funders:
Funding AgencyGrant Number
Defense Area Research Projects Agency (DARPA)N66001-07-1-2058
Defense Area Research Projects Agency (DARPA)HR0011-04-1-0054
U.S. Air Force Office of Scientific Research (AFOSR)FA9550-06-1-0480
NSFUNSPECIFIED
Center for the Physics of Information, CaltechUNSPECIFIED
Rothschild Fellowship (Israel)UNSPECIFIED
Subject Keywords:gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; optical losses; optical planar waveguides; optical resonators; semiconductor lasers; silicon; sputter etching
Issue or Number:6
Classification Code:PACS: 42.82.-m Integrated Optics; 42.55.Px Semiconductor lasers; laser diodes; 42.79.Gn Optical waveguides and couplers; 42.60.By Design of specific laser systems;
Record Number:CaltechAUTHORS:20100114-152003679
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20100114-152003679
Official Citation:Advanced silicon processing for active planar photonic devices Michael Shearn, Kenneth Diest, Xiankai Sun, Avi Zadok, Harry Atwater, Amnon Yariv, and Axel Scherer, J. Vac. Sci. Technol. B 27, 3180 (2009), DOI:10.1116/1.3256649
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:17190
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:28 Jan 2010 19:59
Last Modified:03 Oct 2019 01:24

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