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Type II superlattices for infrared detectors and devices

Chow, D. H. and Miles, R. H. and Schulman, J. N. and Collins, D. A. and McGill, T. C. (1991) Type II superlattices for infrared detectors and devices. Semiconductor Science and Technology, 6 (12C). C47-C51. ISSN 0268-1242. doi:10.1088/0268-1242/6/12C/010.

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Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds. Specifically, it has been demonstrated that both InSb/InAsxSb1-x superlattices and Ga1-xInxSb/InAs superlattices can possess energy gaps in the 8-14 mu m range. The efforts have focused on the Ga1-xInxSb/InAs system because of its extreme broken gap band alignment, which results in narrow energy gaps for very short superlattice periods. The authors report the use of in situ chemical doping of Ga1-xInxSb/InAs superlattices to fabricate p-n photodiodes. These diodes display a clear photovoltaic response with a threshold near 12 mu m. They have also attained outstanding structural quality in Ga1-xInxSb/InAs superlattices grown on radiatively heated GaSb substrates. Cross-sectional transmission electron microscope images of these superlattices display no dislocations, while high resolution X-ray diffraction scans reveal sharp high-order superlattice satellites and strong Pendellosung fringes.

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Additional Information:© 1991 IOP Publishing Ltd NARROW GAP SEMICONDUCTORS: PROCEEDINGS OF THE NATO WORKSHOP, OSLO, 25-27 JUNE 1991 The authors gratefully acknowledge helpful discussions with AT Hunter, M H Young, R Baron, T C Hassenberg, D L Smith (Los Alamos National Laboratories) and C Mailhiot (Lawrence Livermore Laboratories). The TEM results described in the paper were provided by W J Hamilton of Santa Barbara Research Center. Vital technical assistance was provided by L D Warren, K T Miller and C Hauessler. Parts of this work were performed under Contract nos N00014-89-C-0203 and N00014-89-J-3196 from the Defense Advanced Research Projects Agency and the Office of Naval Research.
Issue or Number:12C
Record Number:CaltechAUTHORS:CHOsst91
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1720
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Deposited On:13 Feb 2006
Last Modified:08 Nov 2021 19:41

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