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Semiempirical calculation of deep levels: divacancy in Si

Lee, T. F. and McGill, T. C. (1973) Semiempirical calculation of deep levels: divacancy in Si. Journal of Physics C: Solid State Physics, 6 (23). pp. 3438-3450. ISSN 0022-3719. doi:10.1088/0022-3719/6/23/017.

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A study of the electronic levels associated with the divacancy in silicon is reported. The extended Huckel theory is shown to reproduce the band structure of silicon. The electronic levels of the divacancy are calculated by considering a periodic array of large unit cells each containing 62 atoms; a 64 atom perfect cell with two atoms removed to form the divacancy. The results are found to be in qualitative agreement with the results of EPR and infrared absorption measurements.

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Additional Information:© Institute of Physics 1973. Received 26 March 1973, in final form 11 June 1973, Print publication: Issue 23 (27 November 1973) The authors would like to acknowledge discussions with R P Messmer, G D Watkins, and F P Larkins.
Issue or Number:23
Record Number:CaltechAUTHORS:LEEjpc73
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1721
Deposited By: Archive Administrator
Deposited On:13 Feb 2006
Last Modified:08 Nov 2021 19:41

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