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Pure-silica zeolite thin films by vapor phase transport of fluoride for low-k applications

Hunt, Heather K. and Lew, Christopher M. and Sun, Minwei and Yan, Yushan and Davis, Mark E. (2010) Pure-silica zeolite thin films by vapor phase transport of fluoride for low-k applications. Microporous and Mesoporous Materials, 128 (1-3). pp. 12-18. ISSN 1387-1811.

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A new method to synthesize pure-silica zeolite films is presented. Specifically, this method uses fluoridemediated syntheses that involve the vapor phase transport of the mineralizing agent, fluoride, to crystallize a precursor film deposited by dip-coating techniques to obtain thin films of pure-silica zeolites with LTA, CHA, and ITW topologies. The films are characterized by a combination of X-ray diffraction, field emission scanning electron microscopy, and X-ray energy dispersive analyses. The films are polycrystalline, intergrown, continuous and well-adhered to their substrates. The usefulness of these thin films as low-k materials, that are needed to reduce cross-talk noise and energy dissipation between transistors in an integrated circuit, is demonstrated via evaluation of the pure-silica LTA film. The LTA topology has the lowest framework density (FD = 14.2) of the 19 known pure-silica zeolites, and theoretically could have the lowest dielectric constant. The average dielectric constants of the LTA films are calculated from capacitance measurements at a frequency of 1 MHz with metal–insulator–metal structures on lowresistivity silicon substrates, and yield an average k = 1.69, well within the ultra low-k material requirements (k between 2.3 and 2.6).

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Davis, Mark E.0000-0001-8294-1477
Additional Information:© 2009 Elsevier. Received 20 May 2009; revised 21 July 2009; accepted 25 July 2009. Available online 5 August 2009. The authors thank the National Science Foundation, as well as the National Science Foundation Graduate Research Fellowship Program, for financial support. The authors also thank Prof. J. Greer and Dr. D. Jang at Caltech for aid and instruction on the Nanoindenter G200.
Funding AgencyGrant Number
NSF Graduate Research Fellowship ProgramUNSPECIFIED
Subject Keywords:Zeolite; Films; LTA; Dielectric constant; Ultra low-k
Issue or Number:1-3
Record Number:CaltechAUTHORS:20100125-095643851
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:17297
Deposited By: Jason Perez
Deposited On:25 Jan 2010 21:18
Last Modified:09 Mar 2020 13:18

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