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Fully inverted single-digit nanometer domains in ferroelectric films

Tayebi, Noureddine and Narui, Yoshie and Franklin, Nathan and Collier, C. Patrick and Giapis, Konstantinos P. and Nishi, Yoshio and Zhang, Yuegang (2010) Fully inverted single-digit nanometer domains in ferroelectric films. Applied Physics Letters, 96 (2). 023103. ISSN 0003-6951.

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Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density (>1 Tbit/in.^2) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/in.^2 data storage densities

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Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 2010 American Institute of Physics. Received 6 November 2009; accepted 5 December 2009; published 12 January 2010. Part of Y.Z.’s work was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
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Department of Energy (DOE)DE-AC02-05CH11231
Issue or Number:2
Record Number:CaltechAUTHORS:20100216-100459003
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Official Citation:Fully inverted single-digit nanometer domains in ferroelectric films Noureddine Tayebi, Yoshie Narui, Nathan Franklin, C. Patrick Collier, Konstantinos P. Giapis, Yoshio Nishi, and Yuegang Zhang, Appl. Phys. Lett. 96, 023103 (2010), DOI:10.1063/1.3280371
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:17482
Deposited By: Jason Perez
Deposited On:16 Feb 2010 21:12
Last Modified:03 Oct 2019 01:28

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