A Caltech Library Service

Analysis of the Tuning Sensitivity of Silicon-on-Insulator Optical Ring Resonators

Baehr-Jones, Tom and Hochberg, Michael and Walker, Chris and Chan, Eric and Koshinz, Dennis and Krug, William and Scherer, Axel (2005) Analysis of the Tuning Sensitivity of Silicon-on-Insulator Optical Ring Resonators. Journal of Lightwave Technology, 23 (12). pp. 4215-4221. ISSN 0733-8724. doi:10.1109/JLT.2005.853147.

See Usage Policy.


Use this Persistent URL to link to this item:


High-quality-factor optical ring resonators have recently been fabricated in thin silicon-on-insulator (SOI). Practical applications of such devices will require careful tuning of the precise location of the resonance peaks. In particular, one often wants to maximize the resonance shift due to the presence of an active component and minimize the resonance shift due to temperature changes. This paper presents a semianalytic formalism that allows the prediction of such resonance shifts from the waveguide geometry. This paper also presents the results of experiments that show the tuning behavior of several ring resonators and find that the proposed semianalytic formalism agrees with the observed behavior.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© Copyright 2005 IEEE. Reprinted with permission. Manuscript received August 23, 2004; revised May 13, 2005. This work was supported in part by the Defense Advanced Projects Research Administration contract N00421-02-D-3223 under the Chip-Scale Wavelength Division Multiplexing program.
Subject Keywords:Integrated optics; integrated optoelectronics; optical waveguide; photothermal effects
Issue or Number:12
Record Number:CaltechAUTHORS:BAEjlt05
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1761
Deposited By: Archive Administrator
Deposited On:17 Feb 2006
Last Modified:08 Nov 2021 19:42

Repository Staff Only: item control page