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Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain

Bridger, P. M. and Bandić, Z. Z. and Piquette, E. C. and McGill, T. C. (1999) Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain. Journal of Vacuum Science and Technology B, 17 (4). pp. 1750-1752. ISSN 1071-1023. doi:10.1116/1.590819.

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We have studied molecular beam epitaxy grown GaN films using electric force microscopy to detect sub-1 µm regions of electric field gradient and surface potential variations associated with GaN extended defects. The large piezoelectric coefficients of GaN together with strain introduced by crystalline imperfections produce variation in piezoelectrically induced electric fields around these defects. The consequent spatial rearrangement of charges can be detected by electrostatic force microscopy, and can be additionally modified by externally applied strain and illumination. The electron force microscopy signal was found to be a function of the applied tip bias, showed reversal under externally applied strain, and was sensitive to above band gap illumination.

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Additional Information:©1999 American Vacuum Society. (Received 19 January 1999; accepted 3 May 1999) The authors would like to thank R. A. Beach for his useful comments and suggestions. This work was supported by the Advanced Research Project Agency, and monitored by the Office of Naval Research under Grant No. N00014-92-J-1845.
Subject Keywords:surface potential; atomic force microscopy; gallium compounds; charge measurement; electric field gradient; extended defects; wide band gap semiconductors; III-V semiconductors; piezoelectric semiconductors; semiconductor epitaxial layers
Issue or Number:4
Record Number:CaltechAUTHORS:BRIjvstb99
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1839
Deposited By: Archive Administrator
Deposited On:20 Feb 2006
Last Modified:08 Nov 2021 19:42

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