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Piezoelectric fields in nitride devices

Beach, R. A. and McGill, T. C. (1999) Piezoelectric fields in nitride devices. Journal of Vacuum Science and Technology B, 17 (4). pp. 1753-1756. ISSN 1071-1023. doi:10.1116/1.590820.

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We have calculated the piezoelectric field and charge distribution for various III-nitride heterostructures. Our calculations include strain energy minimization and doping effects, and are presented to show the magnitude of piezoelectric effects in strained layers. We compare our calculated results to device results where available. These include the two-dimensional electron gas in heterojunction field effect transistors, Schottky diodes with strained layers for Schottky height engineering, and III-nitride single quantum wells. Calculations that included energy considerations resulted in good agreement between predicted and observed field and charge distributions for the heterojunction fields-effect transistors structure.

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Additional Information:©1999 American Vacuum Society. (Received 19 January 1999; accepted 3 May 1999) This work has been supported by the Defense Advanced Research Projects Administration and Electric Power Research Institute monitored under ONR Grant No. MDA972-98-1-0005.
Subject Keywords:junction gate field effect transistors; III-V semiconductors; piezoelectric semiconductors; Schottky diodes; two-dimensional electron gas; quantum well devices
Issue or Number:4
Record Number:CaltechAUTHORS:BEAjvstb99
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1840
Deposited By: Archive Administrator
Deposited On:20 Feb 2006
Last Modified:08 Nov 2021 19:42

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