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Silicon microcantilevers with MOSFET detection

Tosolini, Giordano and Villanueva, Guillermo and Perez-Murano, Francesc and Bausells, Joan (2010) Silicon microcantilevers with MOSFET detection. Microelectronic Engineering, 87 (5-8). pp. 1245-1247. ISSN 0167-9317.

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We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have been fabricated by As implantation to obtain shallow PN junctions. The cantilevers have been oriented on the non-standard (1 0 0) crystallographic direction of silicon, to maximize the stress response of the NMOS transistors. The force sensitivity and resolution of the cantilevers have been tested by applying a force with an AFM tip. Values of 25 μV/pN and 56 pN respectively have been obtained for a force applied at the tip of a cantilever with a length of 200 μm, a width of 24 μm and a silicon thickness of 340 nm.

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Additional Information:© 2009 Elsevier B.V. Received 13 September 2009; revised 3 November 2009; accepted 23 November 2009. Available online 26 November 2009. Work supported by the Spanish Ministry of Science and Innovation through Project TEC2007-65692, and through the NANOSELECT Project of the Consolider-Ingenio 2010 Programme.
Funding AgencyGrant Number
Spanish Ministry of Science and InnovationProject TEC2007-65692
NANOSELECT Project of the Consolider-Ingenio 2010 ProgrammeUNSPECIFIED
Subject Keywords:Microcantilever; MOSFET; Piezoresistance; Biosensor
Issue or Number:5-8
Record Number:CaltechAUTHORS:20100525-085144276
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:18417
Deposited By: Tony Diaz
Deposited On:25 May 2010 18:07
Last Modified:03 Oct 2019 01:42

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