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Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Xu, Zhi-Hui and Park, Young-Bae and Li, Xiaodong (2010) Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si. Journal of Materials Research, 25 (5). pp. 880-889. ISSN 0884-2914. https://resolver.caltech.edu/CaltechAUTHORS:20100526-143959796

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Abstract

Ion implantation has been widely used to improve the mechanical and tribological properties of single crystalline silicon, an essential material for the semiconductor industry. In this study, the effects of four different ion implantations, Ar, C, N, and Ne ions, on the mechanical and tribological properties of single crystal Si were investigated at both the nanoscale and the microscale. Nanoindentation and microindentation were used to measure the mechanical properties and fracture toughness of ion-implanted Si. Nano and micro scratch and wear tests were performed to study the tribological behaviors of different ion-implanted Si. The relationship between the mechanical properties and tribological behavior and the damage mechanism of scratch and wear were also discussed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1557/JMR.2010.0117 DOIArticle
Additional Information:© 2010 Materials Research Society. Received 16 May 2009; accepted 23 September 2009. Financial support for this study was provided by the National Science Foundation (CMMI-0653651, CMMI- 0824728 and EPS-0296165) and the University of South Carolina NanoCenter.
Funders:
Funding AgencyGrant Number
NSFCMMI-0653651
NSFCMMI-0824728
NSFEPS-0296165
University of South Carolina UNSPECIFIED
Issue or Number:5
Record Number:CaltechAUTHORS:20100526-143959796
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20100526-143959796
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:18465
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:20 Jun 2010 19:49
Last Modified:03 Oct 2019 01:42

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