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Effective transition rates for epitaxial growth using fast modulation

Gallivan, Martha A. and Goodwin, David G. and Murray, Richard M. (2004) Effective transition rates for epitaxial growth using fast modulation. Physical Review B, 70 (4). Art. No. 045409. ISSN 1098-0121. doi:10.1103/PhysRevB.70.045409.

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Thin-film deposition is an industrially important process that is highly dependent on the processing conditions. Most films are grown under constant conditions, but a few studies show that modified properties may be obtained with periodic inputs. However, assessing the effects of modulation experimentally becomes impractical with increasing material complexity. Here we consider periodic conditions in which the period is short relative to the time scales of growth. We analyze a stochastic model of thin-film growth, computing effective transition rates associated with rapid periodic process parameters. Combinations of effective rates may exist that are not attainable under steady conditions, potentially enabling new film properties. An algorithm is presented to construct the periodic input for a desired set of effective transition rates. These ideas are demonstrated in three simple examples using kinetic Monte Carlo simulations of epitaxial growth.

Item Type:Article
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Murray, Richard M.0000-0002-5785-7481
Additional Information:©2004 The American Physical Society. Received 31 December 2003; published 13 July 2004. This work was supported by DARPA/NSF under Grant No. DMS-9615858, by AFOSR under Grant No. F49620-95-1-0419, and by NSF. The authors would like to thank Harry Atwater for fruitful discussions.
Subject Keywords:epitaxial growth; epitaxial layers; Monte Carlo methods; stochastic processes
Issue or Number:4
Record Number:CaltechAUTHORS:GALprb04
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1858
Deposited By: Tony Diaz
Deposited On:21 Feb 2006
Last Modified:08 Nov 2021 19:43

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