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Role of film conformality in charging damage during plasma-assisted interlevel dielectric deposition

Hwang, Gyeong S. and Giapis, Konstantinos P. (1999) Role of film conformality in charging damage during plasma-assisted interlevel dielectric deposition. Journal of Vacuum Science and Technology B, 17 (3). pp. 999-1002. ISSN 1071-1023. doi:10.1116/1.590683.

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While observations of charging damage during plasma-assisted deposition have been erratic thus far, concern abounds that it may worsen as aspect ratios increase and high-density plasmas are used more frequently. Simulations of pattern-dependent charging during interlevel dielectric deposition reveal that the initial conformality of the dielectric film plays a crucial role in metal line charge up and the subsequent degradation to the buried gate oxide, to which the metal line is connected. For moderate aspect ratios, significant charging damage occurs for nonconformal step coverage.

Item Type:Article
Related URLs:
URLURL TypeDescription
Hwang, Gyeong S.0000-0002-5538-9426
Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 1999 American Vacuum Society. (Received 29 October 1998; accepted 29 January 1999) This material was based on work supported by an NSF Career Award and a Camille Dreyfus Teacher-Scholar Award to K.P.G. An Applied Materials scholarship in partial support of G.S.H. is gratefully acknowledged.
Funding AgencyGrant Number
Camille and Henry Dreyfus FoundationUNSPECIFIED
Applied MaterialsUNSPECIFIED
Subject Keywords:dielectric thin films; metallisation; conformal coatings; plasma deposition; semiconductor process modelling
Issue or Number:3
Record Number:CaltechAUTHORS:HWAjvstb99
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1861
Deposited By: Archive Administrator
Deposited On:21 Feb 2006
Last Modified:08 Nov 2021 19:43

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