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On the link between electron shadowing and charging damage

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) On the link between electron shadowing and charging damage. Journal of Vacuum Science and Technology B, 15 (5). pp. 1839-1842. ISSN 1071-1023. doi:10.1116/1.589336.

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Charging and topography evolution simulations during plasma etching of high aspect ratio line-and-space patterns reveal that electron shadowing of the sidewalls critically affects charging damage. Decreasing the degree of electron shadowing by using thinner masks decreases the potentials of the etched features with a concomitant reduction in Fowler–Nordheim tunneling currents through underlying thin gate oxides. Simultaneously, the potential distribution in the trench changes, significantly perturbing the local ion dynamics which, in turn, cause the notching effect to worsen. Since the latter can be reduced independently by selecting an appropriate etch chemistry, the use of thinner (hard) masks is predicted to be advantageous for the prevention of gate oxide failure.

Item Type:Article
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URLURL TypeDescription
Hwang, Gyeong S.0000-0002-5538-9426
Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 1997 American Vacuum Society. (Received 17 January 1997; accepted 6 June 1997)
Subject Keywords:sputter etching; semiconductor process modelling; tunnelling; surface charging; masks
Issue or Number:5
Record Number:CaltechAUTHORS:HWAjvstb97a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1864
Deposited By: Archive Administrator
Deposited On:21 Feb 2006
Last Modified:08 Nov 2021 19:43

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