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BST Films Grown by Metal Organic Chemical Vapor Deposition Incorporating Real-Time Control of Stoichiometry

Boyd, David A. and Hirsch, S. G. and Hubbard, C. and Cole, M. W. (2009) BST Films Grown by Metal Organic Chemical Vapor Deposition Incorporating Real-Time Control of Stoichiometry. Integrated Ferroelectrics, 111 (1). pp. 17-26. ISSN 1058-4587. https://resolver.caltech.edu/CaltechAUTHORS:20100615-083857034

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Abstract

We present preliminary results of metal organic chemical vapor deposition (MOCVD) growth of Ba_xSr_(1-x)TiO_3 (BST) thin films. Films were deposited on MgO, sapphire, Si, and Si/Pt/Ti substrates. Real-time monitoring of the precursor flux by UV absorption spectroscopy was used to control the composition of the films over the range 30 ≤ x ≤ 80. The films were characterized for a number of attributes including composition, crystalline structure, and morphology.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1080/10584580903586638 DOIUNSPECIFIED
http://www.informaworld.com/smpp/content~db=all?content=10.1080/10584580903586638PublisherUNSPECIFIED
Additional Information:© 2009 Taylor & Francis Group, LLC. Received August 16, 2009; in final form November 23, 2009. This work has been generously supported by the Army Research Office award #W911NF-07-1-0359.
Funders:
Funding AgencyGrant Number
Army Research OfficeW911NF-07-1-0359
Subject Keywords:BST; ferroelectric thin films; MOCVD
Issue or Number:1
Record Number:CaltechAUTHORS:20100615-083857034
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20100615-083857034
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:18676
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:17 Jun 2010 04:29
Last Modified:03 Oct 2019 01:46

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