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Ga^+ beam lithography for nanoscale silicon reactive ion etching

Henry, M. D. and Shearn, M. J. and Chhim, B. and Scherer, A. (2010) Ga^+ beam lithography for nanoscale silicon reactive ion etching. Nanotechnology, 21 (24). Art. No. 245303 . ISSN 0957-4484. http://resolver.caltech.edu/CaltechAUTHORS:20100615-145746511

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Abstract

By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam (FIB) and an inductively coupled plasma reactive ion etcher (ICP-RIE). Silicon etch masks are patterned via Ga^+ ion implantation in a FIB and then anisotropically etched in an ICP-RIE using fluorinated etch chemistries. We determine the critical areal density of the implanted Ga layer in silicon required to achieve a desired etch depth for both a Pseudo Bosch (SF_6/C_4F_8) and cryogenic fluorine (SF_6/O_2) silicon etching. High fidelity nanoscale structures down to 30 nm and high aspect ratio structures of 17:1 are demonstrated. Since etch masks may be patterned on uneven surfaces, we utilize this lithography to create multilayer structures in silicon. The linear selectivity versus implanted Ga density enables grayscale lithography. Limits on the ultimate resolution and selectivity of Ga lithography are also discussed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1088/0957-4484/21/24/245303 DOIUNSPECIFIED
http://iopscience.iop.org/0957-4484/21/24/245303/PublisherUNSPECIFIED
ORCID:
AuthorORCID
Henry, M. D.0000-0002-5201-0644
Additional Information:© 2010 IOP Publishing Ltd. Received 9 February 2010, in final form 28 April 2010. Published 20 May 2010. M David Henry gratefully acknowledges the support of the Fannie and John Hertz Foundation. Michael Shearn acknowledges the support of the National Science Foundation under their Graduate Research Fellowship program. This work was performed at the Kavli Nanoscience Institute at Caltech and the authors are grateful to the staff for their assistance. The authors also acknowledge funding from NSF Science and Technology Center under DMR-0120967 and CIAN NSF under EEC-0812072 program.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
Fannie and John Hertz Foundation UNSPECIFIED
NSFUNSPECIFIED
NSF Science and Technology Center DMR-0120967
Center For Integrated Access Networks (CIAN) NSF EEC-0812072
Subject Keywords:Electronics and devices Surfaces, interfaces and thin films Plasma physics Condensed matter: structural, mechanical & thermal Nanoscale science and low-D systems
Classification Code:PACS: 81.16.Nd; 61.72.uf; 85.40.Hp; 52.77.Bn; 81.65.Cf; 61.46.-w.
Record Number:CaltechAUTHORS:20100615-145746511
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20100615-145746511
Official Citation:M D Henry et al 2010 Nanotechnology 21 245303 doi: 10.1088/0957-4484/21/24/245303
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:18695
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:30 Jun 2010 19:45
Last Modified:23 Feb 2018 22:20

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