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Measurement of the linewidth enhancement factor alpha of semiconductor lasers

Harder, Christoph and Vahala, Kerry and Yariv, Amnon (1983) Measurement of the linewidth enhancement factor alpha of semiconductor lasers. Applied Physics Letters, 42 (4). pp. 328-330. ISSN 0003-6951. doi:10.1063/1.93921.

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A theory of the amplitude and phase modulation characteristic of a single mode semiconductor laser is presented. In this model the amplitude modulation couples through the complex susceptibility of the gain medium to the phase. We show that this coupling constant can be obtained by a high-frequency modulation experiment. This measured coupling constant is used to infer the linewidth enhancement factor as discussed by Henry, and Vahala and Yariv. Experiments confirmed the model and we measured a linewidth enhancement factor |alpha|=4.6±1.0 for a GaAlAs buried optical guide laser.

Item Type:Article
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Vahala, Kerry0000-0003-1783-1380
Additional Information:Copyright © 1983 American Institute of Physics. Received 15 October 1982; accepted 23 November 1982. The authors thank Dr. M. Nakamura of Hitachi Central Research Laboratories for providing the BOG and CSP lasers used in this experiment. This research was supported by the Office of Naval Research, the National Science Foundation under the Optical Communication Program and by the Army Research Office.
Subject Keywords:semiconductor lasers; line widths; mathematical models; oscillation modes; modulation; gain; experimental data
Issue or Number:4
Record Number:CaltechAUTHORS:HARapl83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1875
Deposited By: Tony Diaz
Deposited On:22 Feb 2006
Last Modified:08 Nov 2021 19:43

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