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Enhanced resistance of single-layer graphene to ion bombardment

Lopez, J. J. and Greer, F. and Greer, J. R. (2010) Enhanced resistance of single-layer graphene to ion bombardment. Journal of Applied Physics, 107 (10). Art. No. 104326. ISSN 0021-8979.

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We report that single-layer graphene on a SiO_2/Si substrate withstands ion bombardment up to ~7 times longer than expected when exposed to focused Ga^+ ion beam. The exposure is performed in a dual beam scanning electron microscope/focused ion beam system at 30 kV accelerating voltage and 41 pA current. Ga^+ ion flux is determined by sputtering a known volume of hydrogenated amorphous carbon film deposited via plasma-enhanced chemical vapor deposition.

Item Type:Article
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Greer, J. R.0000-0002-9675-1508
Additional Information:© 2010 American Institute of Physics. Received 17 January 2010; accepted 15 April 2010; published online 27 May 2010. We gratefully acknowledge financial support of the NRI INDEX Center. We thank M. J. Burek for useful discussions and assistance with the DualBeam system. Access to the Dual-Beam System was provided by the Kavli Nanoscience Institute (KNI) at Caltech. We also appreciate assistance from E. Miura and G. R. Rossman with Raman Spectroscopy, and we thank C. Daraio for access to the optical microscope.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Subject Keywords:graphene, ion beam effects, plasma CVD, scanning electron microscopy, silicon, silicon compounds
Issue or Number:10
Classification Code:PACS: 81.05.ue; 61.80.Jh; 52.77.Dq; 81.15.Gh
Record Number:CaltechAUTHORS:20100625-110342947
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:18814
Deposited By: Tony Diaz
Deposited On:03 Aug 2010 20:43
Last Modified:03 Oct 2019 01:48

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