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Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers

Paiella, Roberto and Hunziker, Guido and Vahala, Kerry J. and Koren, Uzi (1997) Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers. Applied Physics Letters, 71 (25). pp. 3601-3603. ISSN 0003-6951. doi:10.1063/1.120453.

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An experimental technique based on frequency-resolved four-wave mixing is proposed for the investigation of phonon-assisted capture of electrons and holes in electrically pumped semiconductor quantum wells. We show how this technique can be used to directly measure the intrinsic capture lifetime, with no need for involved numerical fits. We also present experimental results from an application of the technique to a multiquantum-well semiconductor optical amplifier. The possible impact of phase matching on the results is discussed.

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Vahala, Kerry J.0000-0003-1783-1380
Additional Information:Copyright © 1997 American Institute of Physics. Received 18 June 1997; accepted 18 October 1997. The authors thank Dr. N. Kwong and Dr. T. Schrans, ORTEL Corp., for the loan of the DFB lasers used in the experiment. This work was supported by ARPA (Contract No. DAAL 01-94-K-03430) and the National Science Foundation (Grant No. ECS-9412862).
Subject Keywords:semiconductor quantum wells; semiconductor superlattices; multiwave mixing; quantum well lasers; electron traps; hole traps; interface states
Issue or Number:25
Record Number:CaltechAUTHORS:PAIapl97
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1904
Deposited By: Tony Diaz
Deposited On:23 Feb 2006
Last Modified:08 Nov 2021 19:43

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