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Recrystallized parylene as a mask for silicon chemical etching

Lo, Hsi-wen and Kuo, Wen-Cheng and Yang, Yao-Joe and Tai, Yu-Chong (2008) Recrystallized parylene as a mask for silicon chemical etching. In: 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems. IEEE , Piscataway, NJ, pp. 842-845. ISBN 978-1-4244-1907-4.

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This paper presents the first use of recrystallized parylene as masking material for silicon chemical etch. Recrystallized parylene was obtained by melting parylene C at 350°C for 2 hours. The masking ability of recrystallized parylene was tested in HNA (hydrofluoric acid, nitric acid and acetic acid) solution of various ratios, KOH (potassium hydroxide) solution and TMAH (tetramethylammonium hydroxide) at different temperatures and concentrations. It is found that interface between parylene and the substrate can be attacked, which results in undercuts. Otherwise, recrystallized parylene exhibited good adhesion to silicon, complete protection of unexposed silicon and silicon etching rates comparable to literature data.

Item Type:Book Section
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Tai, Yu-Chong0000-0001-8529-106X
Additional Information:© 2008 IEEE. The authors thank all members from Caltech Micromachining Laboratory for their assistance on design, fabrication and testing.
Record Number:CaltechAUTHORS:20100721-152410514
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:19148
Deposited By: Tony Diaz
Deposited On:30 Jul 2010 21:41
Last Modified:03 Oct 2019 01:52

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