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Electronic properties of low temperature epitaxial silicon thin film photovoltaic devices grown by HWCVD

Richardson, Christine E. and Langeland, Krista and Atwater, Harry A. (2008) Electronic properties of low temperature epitaxial silicon thin film photovoltaic devices grown by HWCVD. Thin Solid Films, 516 (5). pp. 597-599. ISSN 0040-6090. doi:10.1016/j.tsf.2007.06.178.

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This study addresses the correlation of the electrical, surface, and structural evolution of HWCVD crystalline Si thin films with temperature, thickness, and hydrogen dilution. Scanning electron microscopy and atomic force microscopy reveal an increase with surface roughness with hydrogen dilution, as expected, while showing increasing surface roughness with substrate temperature, in contrast to previous studies of crystalline Si growth. This suggests that H desorption enables more contaminant absorption of the growing surface with increasing temperature, in turn increasing roughness. The open-circuit voltage of these films is shown to increase significantly over time, 50 mV over one week, due to the decrease in surface recombination velocity associated with the growth of a native oxide layer. This indicates the importance of post-deposition treatments for surface passivation.

Item Type:Article
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Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2007 Elsevier. Available online 10 July 2007. This work was supported by BP Solar and the National Renewable Energy Laboratory. One of us (C.E. Richardson), also acknowledges Corning, Inc for fellowship support via an NPSC fellowship.
Funding AgencyGrant Number
National Renewable Energy LaboratoryUNSPECIFIED
Subject Keywords:Hot-wire deposition; Silicon; Low temperature epitaxial growth; Electrical properties; Growth mechanism; Surface roughness
Series Name:Proceedings of the Fourth International Conference on Hot-Wire CVD Cat-CVD Process
Issue or Number:5
Record Number:CaltechAUTHORS:20100727-115951233
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:19200
Deposited On:27 Jul 2010 22:12
Last Modified:08 Nov 2021 23:50

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