A Caltech Library Service

In situ characterization of vertically oriented carbon nanofibers for three-dimensional nano-electro-mechanical device applications

Kaul, Anupama B. and Megerian, Krikor G. and Jennings, Andrew T. and Greer, Julia R. (2010) In situ characterization of vertically oriented carbon nanofibers for three-dimensional nano-electro-mechanical device applications. Nanotechnology, 21 (31). Art. No. 315501. ISSN 0957-4484.

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item:


We have performed mechanical and electrical characterization of individual as-grown, vertically oriented carbon nanofibers (CNFs) using in situ techniques, where such high-aspect-ratio, nanoscale structures are of interest for three-dimensional (3D) electronics, in particular 3D nano-electro-mechanical-systems (NEMS). Nanoindentation and uniaxial compression tests conducted in an in situ nanomechanical instrument, SEMentor, suggest that the CNFs undergo severe bending prior to fracture, which always occurs close to the bottom rather than at the substrate–tube interface, suggesting that the CNFs are well adhered to the substrate. This is also consistent with bending tests on individual tubes which indicated that bending angles as large as ~70° could be accommodated elastically. In situ electrical transport measurements revealed that the CNFs grown on refractory metallic nitride buffer layers were conducting via the sidewalls, whereas those synthesized directly on Si were electrically unsuitable for low-voltage dc NEMS applications. Electrostatic actuation was also demonstrated with a nanoprobe in close proximity to a single CNF and suggests that such structures are attractive for nonvolatile memory applications. Since the magnitude of the actuation voltage is intimately dictated by the physical characteristics of the CNFs, such as diameter and length, we also addressed the ability to tune these parameters, to some extent, by adjusting the plasma-enhanced chemical vapor deposition growth parameters with this bottom-up synthesis approach.

Item Type:Article
Related URLs:
URLURL TypeDescription DOIArticle
Greer, Julia R.0000-0002-9675-1508
Additional Information:© 2010 IOP Publishing Ltd. Received 20 January 2010, in final form 17 May 2010. Published 12 July 2010. We sincerely acknowledge Robert Kowalczyk for his assistance with the PECVD growth chamber, Ron Ruiz for assistance with SEM configuration, Henry LeDuc for deposition equipment, in addition to Choonsup Lee, Abdur Khan, Leif Bagge, Richard Baron, Paul von Allmen, and Larry Epp for useful discussions. We would also like to thank Shelby Hutchens of the California Institute of Technology (Caltech), Brian Peters of Agilent Technologies for SEM imaging (figures 3(a) and (b)), and Dongchan Jang for assistance with the TEM sample preparation. We gratefully acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech. This research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration and was funded through the internal Research and Technology Development (R&TD) program 01STCR, R.08.023.060. JRG also gratefully acknowledges the financial support of NSF CAREER grant (DMR-0748267).
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Issue or Number:31
Classification Code:PACS: 62.25.-g; 81.40.Np; 81.70.Bt; 85.85.+j; 62.20.M-; 73.63.Bd
Record Number:CaltechAUTHORS:20100803-153016422
Persistent URL:
Official Citation:Anupama B Kaul et al 2010 Nanotechnology 21 315501 doi: 10.1088/0957-4484/21/31/315501
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:19266
Deposited By: Tony Diaz
Deposited On:03 Aug 2010 22:45
Last Modified:03 Oct 2019 01:54

Repository Staff Only: item control page