A Caltech Library Service

Silicon optical nanocrystal memory

Walters, R. J. and Kik, P. G. and Casperson, J. D. and Atwater, H. A. and Lindstedt, R. and Giorgi, M. and Bourianoff, G. (2004) Silicon optical nanocrystal memory. Applied Physics Letters, 85 (13). pp. 2622-2624. ISSN 0003-6951. doi:10.1063/1.1795364.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased electrically via charge injection and optically via internal photoemission. Photoluminescence suppression of up to 80% is demonstrated with data retention times of up to several minutes at room temperature.

Item Type:Article
Related URLs:
URLURL TypeDescription
Atwater, H. A.0000-0001-9435-0201
Additional Information:© 2004 American Institute of Physics. Received 19 January 2004; accepted 22 July 2004. This work was supported by Intel Corporation and NASA. One of the authors (R.J.W.) gratefully acknowledges NDSEG Fellowship support through the Army Research Office.
Funding AgencyGrant Number
National Defense Science and Engineering Graduate (NDSEG) FellowshipUNSPECIFIED
Army Research Office (ARO)UNSPECIFIED
Subject Keywords:silicon; elemental semiconductors; nanostructured materials; semiconductor storage; Auger effect; photoemission; charge injection; photoluminescence; optical storage
Issue or Number:13
Record Number:CaltechAUTHORS:WALapl04
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1936
Deposited By: Tony Diaz
Deposited On:24 Feb 2006
Last Modified:08 Nov 2021 19:43

Repository Staff Only: item control page