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Increased cell efficiency in InGaAs thin film solar cells with dielectric and metal back reflectors

Aydin, Koray and Leite, Marina S. and Atwater, Harry A. (2010) Increased cell efficiency in InGaAs thin film solar cells with dielectric and metal back reflectors. In: 34th IEEE Photovoltaic Specialists Conference. IEEE Photovoltaic Specialists Conference . IEEE , New York, pp. 1087-1091. ISBN 978-1-4244-2949-3.

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Compound single junction and multijunction solar cells enable very high photovoltaic efficiencies by virtue of employing different band gap materials in seriesconnected tandem cells to access the full solar spectrum. Researchers focused on improving the electrical properties of solar cells by optimizing the material growth conditions, however relatively little work to date has been devoted to light trapping and enhanced absorption in III-V compound solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film solar cells by means of numerical modeling. Flat dielectric and metal back reflectors that might be introduced into the solar cell via wafer-bonding, epitaxial lift-off or deposition techniques have been shown to increase the short circuit current and the photovoltaic efficiency of solar cells.

Item Type:Book Section
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URLURL TypeDescription DOIArticle
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2009 IEEE. This work was supported by the Department of Energy, and the Center for Science and Engineering of Materials, an NSF Materials Research Science and Engineering Center at Caltech.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Department of Energy (DOE)UNSPECIFIED
Series Name:IEEE Photovoltaic Specialists Conference
Record Number:CaltechAUTHORS:20100816-091334419
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:19433
Deposited By: Tony Diaz
Deposited On:16 Aug 2010 18:17
Last Modified:08 Nov 2021 23:52

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