Feng, X. L. and Matheny, M. H. and Zorman, C. A. and Mehregany, M. and Roukes, M. L. (2010) Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires. Nano Letters, 10 (8). pp. 2891-2896. ISSN 1530-6984. doi:10.1021/nl1009734. https://resolver.caltech.edu/CaltechAUTHORS:20100830-101323664
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Abstract
We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as ~20 nm and lateral switching gaps as narrow as ~10 nm. Very low switch-on voltages are obtained, from a few volts down to ~1 V level. Two-terminal, contact-mode “hot” switching with high on/off ratios (>10^2 or 10^3) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.
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| Additional Information: | © 2010 American Chemical Society. Received for review: 03/19/2010. Published on Web: 07/16/2010. We are grateful to S. Stryker for help in engineering the experimental apparatus. We thank G. DeRose for help with the lithography tool and J. Xiang and E. B. Myers for helpful discussions. We are grateful to Dr. A. Lal and Dr. A. I. Akinwande, and to the support from DARPA/ MTO and SPAWAR under Grant No. N66001-07-2039, and DARPA/MTO and Department of Interior/National Business Center under Grant No. NBCH1090007. | |||||||||
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| Subject Keywords: | Nanoelectromechanical systems; nanowires; switch; silicon carbide; mechanical computation | |||||||||
| Issue or Number: | 8 | |||||||||
| DOI: | 10.1021/nl1009734 | |||||||||
| Record Number: | CaltechAUTHORS:20100830-101323664 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20100830-101323664 | |||||||||
| Official Citation: | Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires X. L. Feng, M. H. Matheny, C. A. Zorman, M. Mehregany, M. L. Roukes Nano Letters 2010 10 (8), 2891-2896 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 19705 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 14 Sep 2010 17:20 | |||||||||
| Last Modified: | 08 Nov 2021 23:54 |
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