CaltechAUTHORS
  A Caltech Library Service

Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires

Feng, X. L. and Matheny, M. H. and Zorman, C. A. and Mehregany, M. and Roukes, M. L. (2010) Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires. Nano Letters, 10 (8). pp. 2891-2896. ISSN 1530-6984. https://resolver.caltech.edu/CaltechAUTHORS:20100830-101323664

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20100830-101323664

Abstract

We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as ~20 nm and lateral switching gaps as narrow as ~10 nm. Very low switch-on voltages are obtained, from a few volts down to ~1 V level. Two-terminal, contact-mode “hot” switching with high on/off ratios (>10^2 or 10^3) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/nl1009734 DOIArticle
http://pubs.acs.org/doi/full/10.1021/nl1009734PublisherArticle
ORCID:
AuthorORCID
Feng, X. L.0000-0002-1083-2391
Matheny, M. H.0000-0002-3488-1083
Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2010 American Chemical Society. Received for review: 03/19/2010. Published on Web: 07/16/2010. We are grateful to S. Stryker for help in engineering the experimental apparatus. We thank G. DeRose for help with the lithography tool and J. Xiang and E. B. Myers for helpful discussions. We are grateful to Dr. A. Lal and Dr. A. I. Akinwande, and to the support from DARPA/ MTO and SPAWAR under Grant No. N66001-07-2039, and DARPA/MTO and Department of Interior/National Business Center under Grant No. NBCH1090007.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Space and Naval Warfare Systems Command (SPAWAR)N66001-07-2039
Department of InteriorNBCH1090007
Subject Keywords:Nanoelectromechanical systems; nanowires; switch; silicon carbide; mechanical computation
Issue or Number:8
Record Number:CaltechAUTHORS:20100830-101323664
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20100830-101323664
Official Citation:Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires X. L. Feng, M. H. Matheny, C. A. Zorman, M. Mehregany, M. L. Roukes Nano Letters 2010 10 (8), 2891-2896
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:19705
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:14 Sep 2010 17:20
Last Modified:25 Oct 2019 23:31

Repository Staff Only: item control page