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Epitaxial growth of aligned GaN nanowires and nanobridges

Kim, Kyungkon and Henry, Tania and Cui, George and Han, Jung and Song, Yoon-Kyu and Nurmikko, Arto V. and Tang, Hong (2007) Epitaxial growth of aligned GaN nanowires and nanobridges. Physica Status Solidi B, 244 (6). pp. 1810-1814. ISSN 0370-1972. doi:10.1002/pssb.200674843.

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Homo-epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas. The GaN nanowires showed preferential growth along the 〈100〉 direction (m-axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb-like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowires is reported. Combination of ELO with nanowire synthesis is expected to provide a new paradigm for nano-electronic and electromechanical devices.

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Additional Information:© 2007 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received 21 September 2006, revised 4 January 2007, accepted 9 January 2007. Published online 25 April 2007.
Issue or Number:6
Classification Code:PACS: 61.46.–w, 62.25.+g, 81.07.Bc, 81.16.– c
Record Number:CaltechAUTHORS:20100924-080631940
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Official Citation:Kim, K., Henry, T., Cui, G., Han, J., Song, Y.-K., Nurmikko, A. V. and Tang, H. (2007), Epitaxial growth of aligned GaN nanowires and nanobridges. physica status solidi (b), 244: 1810–1814. doi: 10.1002/pssb.200674843
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:20117
Deposited By: Tony Diaz
Deposited On:24 Sep 2010 20:02
Last Modified:08 Nov 2021 23:57

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