A Caltech Library Service

Characterization of Parylene as a Water Barrier via Buried-in Pentacene Moisture Sensors for Soaking Tests

Lo, Hsi-wen and Tai, Yu-Chong (2007) Characterization of Parylene as a Water Barrier via Buried-in Pentacene Moisture Sensors for Soaking Tests. In: 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems. IEEE , Piscataway, NJ, pp. 872-875. ISBN 978-1-4244-0609-8.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


We present a simple method to characterize parylene as a water barrier for soaking tests. The key component is the buried-in pentacene moisture sensor, which is a thin-film transistor sandwiched between two layers of parylene C. This pentacene thin-film transistor takes bottom contact configuration and uses parylene C as the gate dielectric material. Parylene films containing pentacene moisture sensors are soaked in saline at room temperature and the saturation drain current of pentacene thin film transistors is monitored. Hole mobility of pentacene is extracted via linearization of the square root of the drain current of the transistor versus gate voltages. We can determine the capability of parylene as a water permeation barrier by the changes of pentacene mobility.

Item Type:Book Section
Related URLs:
URLURL TypeDescription DOIArticle
Tai, Yu-Chong0000-0001-8529-106X
Additional Information:© 2007 IEEE. The authors would like to thank Mr. Trevor Roper for his assistance with equipment and fabrication. We would also thank Tanya Owen, Christine Matsuki and other members of the Caltech Micromachining Laboratory for their assistance.
Subject Keywords:pentacene; thin-filin transistor; parylene
Record Number:CaltechAUTHORS:20101001-094055392
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:20243
Deposited By: Tony Diaz
Deposited On:01 Oct 2010 22:21
Last Modified:08 Nov 2021 23:58

Repository Staff Only: item control page