CaltechAUTHORS
  A Caltech Library Service

Achieving optical gain in waveguide-confined nanocluster-sensitized erbium by pulsed excitation

Miller, Gerald M. and Briggs, Ryan M. and Atwater, Harry A. (2010) Achieving optical gain in waveguide-confined nanocluster-sensitized erbium by pulsed excitation. Journal of Applied Physics, 108 (6). Art. No. 063109. ISSN 0021-8979. doi:10.1063/1.3465120. https://resolver.caltech.edu/CaltechAUTHORS:20101103-113517781

[img]
Preview
PDF - Published Version
See Usage Policy.

371kB

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20101103-113517781

Abstract

We use a rate equation approach to model the conditions for optical gain in nanocluster sensitized erbium in a slot waveguide geometry. We determine the viability of achieving net gain for the range of reported values of the carrier absorption cross section for silicon nanoclusters. After accounting for the local density of optical states modification of the emission rates, we find that gain is impossible in continuous wave pumping due to carrier absorption, regardless of the carrier absorption cross section. We, therefore, propose a pulsed electrical operation scheme which mitigates carrier absorption by taking advantage of the short lifetime of silicon nanoclusters compared to erbium. We show that pulsed excitation of a 10 nm layer achieves a modal gain of 0.9 dB/cm during each pulse. Furthermore this gain can be increased to 2 dB/cm by pumping a 50 nm layer.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.3465120 DOIArticle
http://link.aip.org/link/JAPIAU/v108/i6/p063109/s1PublisherArticle
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2010 American Institute of Physics. Received 15 March 2010; accepted 15 June 2010; published online 27 September 2010. The authors wish to thank D. Pacifici for many useful discussions. This project was funded by the AFOSR under the MURI Award No. FA9550-06-1-0470 and also under AFOSR Grant No. FA9550-06-1-0480. R.M.B. gratefully acknowledges the support of the National Defense Science and Engineering Graduate Fellowship.
Funders:
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)FA9550-06-1-0470
Air Force Office of Scientific Research (AFOSR)FA9550-06-1-0480
National Defense Science and Engineering Graduate (NDSEG) FellowshipUNSPECIFIED
Subject Keywords:density functional theory, erbium, excited states, nanostructured materials, optical waveguides, silicon
Issue or Number:6
Classification Code:PACS: 42.79.Gn; 71.15.Mb; 73.22.-f
DOI:10.1063/1.3465120
Record Number:CaltechAUTHORS:20101103-113517781
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20101103-113517781
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:20655
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:04 Nov 2010 15:31
Last Modified:09 Nov 2021 00:02

Repository Staff Only: item control page