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A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications

Xue, Mei and Kabehie, Sanaz and Stieg, Adam Z. and Tkatchouk, Ekaterina and Benitez, Diego and Goddard, William A., III and Zink, Jeffrey I. and Wang, Kang L. (2010) A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications. IEEE Electron Device Letters, 31 (9). pp. 1047-1049. ISSN 0741-3106 . http://resolver.caltech.edu/CaltechAUTHORS:20101110-110530178

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Abstract

A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 10^4, a read window of about 2.5 V, and retention performance of greater than 10^4 s. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/LED.2010.2052018DOIUNSPECIFIED
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5512600PublisherUNSPECIFIED
Additional Information:© 2010 IEEE. Manuscript received May 17, 2010; accepted May 26, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported by the FCRP-FENA Center. The review of this letter was arranged by Editor T. Wang.
Funders:
Funding AgencyGrant Number
Focus Center Research Program-The Center on Functional Engineered Nano Architectonics Center (FENA-FCRP Center) UNSPECIFIED
Subject Keywords:Molecular rotor; monolayer; nonvolatile memory; redox-induced rotation; resistive switching; tunneling transport
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Other Numbering System NameOther Numbering System ID
INSPEC Accession Number11477412
Record Number:CaltechAUTHORS:20101110-110530178
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20101110-110530178
Official Citation:Mei Xue; Kabehie, S.; Stieg, A.Z.; Tkatchouk, E.; Benitez, D.; Goddard, W.A.; Zink, J.I.; Wang, K.L.; , "A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications," Electron Device Letters, IEEE , vol.31, no.9, pp.1047-1049, Sept. 2010 doi: 10.1109/LED.2010.2052018 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5512600&isnumber=5556401
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:20741
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:11 Nov 2010 18:18
Last Modified:26 Dec 2012 12:37

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