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Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes

Ambrico, M. and Losurdo, M. and Capezzuto, P. and Bruno, G. and Ligonzo, T. and Haick, H. (2006) Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes. Applied Surface Science, 252 (21). pp. 7636-7641. ISSN 0169-4332. https://resolver.caltech.edu/CaltechAUTHORS:20101112-154257142

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Abstract

This work shows how partial monolayer of organic molecules or radio-frequency remote plasma surface treatment affects the electrical transport across Au/n-GaAs junctions. In the first case, a series of molecules with systematically varying dipole moment were adsorbed on n-GaAs surfaces, whereas in the second case GaN ultra-thin layers with different thickness were formed by N_(2)–H_(2) GaAs plasma nitridation, prior to contact deposition. The characteristics of electrical charge transport across the resulting interfaces were studied by current–voltage (I–V), internal photoemission (IPE), and capacitance–voltage (C–V) techniques. In this way, we find that the simplest description for the experimentally observed data is in terms of two different barrier heights, rather than one barrier height, at the interface. The first could be identified with areas free of modified GaAs, and the second with areas controlled by electrostatic effects of adjacent dipolar domains, which affects also semiconductor regions under the film's pinholes.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/j.apsusc.2006.03.057DOIUNSPECIFIED
http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6THY-4JXPS01-2&_user=1010281&_coverDate=08%2F31%2F2006&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_acct=C000050264&_version=1&_urlVersion=0&_userid=1010281&md5=23a1146PublisherUNSPECIFIED
Additional Information:© 2006 Elsevier. Available online 11 May 2006. The authors thank Prof. David Cahen (Weizmann Institute of Science) for support and fruitful discussions, and Mr. Alberto Sacchetti and Mr. D. Lojacono for their technical help in laboratory activity. MA and TL acknowledge Prof. A. Valentini, L. Schiavulli, and V. Augelli (Univeristy of Bari) for their support.
Subject Keywords:GaAs; GaN; Plasma; Monolayer; Interface; Diode; Barrier height
Issue or Number:21
Classification Code:PACS: 81.07.Pr; 81.15.Gh; 85.30.Kk; 85.65.+h
Record Number:CaltechAUTHORS:20101112-154257142
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20101112-154257142
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:20787
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:15 Nov 2010 19:19
Last Modified:03 Oct 2019 02:15

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