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Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes

Strittmatter, R. P. and Beach, R. A. and Picus, G. S. and McGill, T. C. (2003) Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes. Journal of Applied Physics, 94 (9). pp. 5958-5963. ISSN 0021-8979. doi:10.1063/1.1611267.

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We report on the use of metal-insulator-semiconductor (MIS) diodes, formed on n-GaN with SiO2, for capacitive strain sensing. These diodes, when subjected to static strain, were found to exhibit a steady-state change in capacitance. As a result, they can be used to detect strain with frequencies all the way down to dc. We formulate a model to explain the action of piezoelectricity in the diode and obtain excellent agreement with measurements. The model is then used to develop design criteria which optimize the sensitivity of the diode to detect strain. The sensitivity of the devices tested here rivals that of the best silicon piezoresistive sensors, but could attain nearly tenfold improvement with only minor design changes. Finally, we consider the effects of interface states on sensor performance and demonstrate how static strain sensing in GaN MIS diodes is enabled by the high quality of the oxide interface.

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Additional Information:Copyright © 2003 American Institute of Physics. Received 10 March 2003; accepted 29 July 2003. The authors gratefully acknowledge the help of J.O. McCaldin, O.J. Marsh, and W.T. Harris. In addition, the authors wish to thank P.A. Strittmatter for many useful discussions, and J.H. Parkhurst, C.D. Strittmatter, and E. Soedarmadji for serious technical assistance. This work was supported by the Defense Advanced Research Projects (Contract No. N00014-99-1-0972) under the direction of R. A. Radack and monitored at ONR by C. Wood and J. Zolper.
Subject Keywords:gallium compounds; III-V semiconductors; wide band gap semiconductors; MIS devices; strain sensors; piezoelectricity; interface states; semiconductor device measurement; capacitance
Issue or Number:9
Record Number:CaltechAUTHORS:STRIjap03
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2115
Deposited By: Tony Diaz
Deposited On:09 Mar 2006
Last Modified:08 Nov 2021 19:45

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