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Controlled nonuniformity in macroporous silicon pore growth

Matthias, Sven and Müller, Frank and Gösele, Ulrich (2005) Controlled nonuniformity in macroporous silicon pore growth. Applied Physics Letters, 87 (22). Art. No. 224106. ISSN 0003-6951.

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Photoelectrochemical etching of uniform prestructured silicon wafers in hydrofluoric acid containing solutions yields periodic structures that can be applied to two- and three-dimensional photonic crystals or microfluidics. Here we demonstrate experimentally macroporous silicon etching initiated by a nonuniform predefined lattice. For conveniently chosen parameters we observe a stable growth of pores whose geometrical appearance depends strongly on the spatially different nucleation conditions. Moreover, we show preliminary results on three-dimensionally shaped pores. This material can be used to realize hybrid photonic crystal structures and incorporate waveguides in three-dimensional photonic crystals.

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Additional Information:Copyright © 2005 American Institute of Physics. Received 16 September 2005; accepted 12 October 2005; published online 23 November 2005. The authors thank B. Hasler (Infineon Technologies) for the supply of surface-structured silicon wafers. This project was partly financed by a research award for young scientists given by the government of Saxony-Anhalt in 2003 to one of the authors (S.M.).
Subject Keywords:silicon; elemental semiconductors; porous materials; etching; nucleation
Issue or Number:22
Record Number:CaltechAUTHORS:MATapl05
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2116
Deposited By: Tony Diaz
Deposited On:09 Mar 2006
Last Modified:02 Oct 2019 22:50

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