Tamboli, Adele C. and Malhotra, Manav and Kimball, Gregory M. and Turner-Evans, Daniel B. and Atwater, Harry A. (2010) Conformal GaP layers on Si wire arrays for solar energy applications. Applied Physics Letters, 97 (22). Art. No. 221914 . ISSN 0003-6951. doi:10.1063/1.3522895. https://resolver.caltech.edu/CaltechAUTHORS:20110106-082642400
![[img]](https://authors.library.caltech.edu/style/images/fileicons/application_pdf.png)
|
PDF
- Published Version
See Usage Policy. 864kB |
Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20110106-082642400
Abstract
We report conformal, epitaxial growth of GaP layers on arrays of Si microwires. Silicon wires grown using chlorosilane chemical vapor deposition were coated with GaP grown by metal-organic chemical vapor deposition. The crystalline quality of conformal, epitaxial GaP/Si wire arrays was assessed by transmission electron microscopy and x-ray diffraction. Hall measurements and photoluminescence show p- and n-type doping with high electron mobility and bright optical emission. GaP pn homojunction diodes on planar reference samples show photovoltaic response with an open circuit voltage of 660 mV.
| Item Type: | Article | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Related URLs: |
| ||||||||||||
| ORCID: |
| ||||||||||||
| Additional Information: | © 2010 American Institute of Physics. Received 20 June 2010; accepted 10 November 2010; published online 3 December 2010. Funding for this work was provided by DARPA and the Caltech Center for Sustainable Energy Research. D.B.T.-E. acknowledges fellowship support from the NSF. The authors thank Nick Strandwitz, Carrie Hofmann, Carol Garland, and Emily Warmann for assistance with GaP processing and characterization. | ||||||||||||
| Funders: |
| ||||||||||||
| Subject Keywords: | electron mobility, elemental semiconductors, gallium compounds, Hall effect, III-V semiconductors, MOCVD, photoluminescence, photovoltaic effects, p-n junctions, semiconductor diodes, semiconductor doping, semiconductor epitaxial layers, semiconductor growth, silicon, transmission electron microscopy, X-ray diffraction | ||||||||||||
| Issue or Number: | 22 | ||||||||||||
| Classification Code: | PACS: 68.55.ag; 81.15.Gh; 81.05.Ea; 73.61.-r; 85.30.Kk; 78.66.-w | ||||||||||||
| DOI: | 10.1063/1.3522895 | ||||||||||||
| Record Number: | CaltechAUTHORS:20110106-082642400 | ||||||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20110106-082642400 | ||||||||||||
| Official Citation: | Conformal GaP layers on Si wire arrays for solar energy applications Adele C. Tamboli, Manav Malhotra, Gregory M. Kimball, Daniel B. Turner-Evans, and Harry A. Atwater, Appl. Phys. Lett. 97, 221914 (2010), DOI:10.1063/1.3522895 | ||||||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||||||
| ID Code: | 21615 | ||||||||||||
| Collection: | CaltechAUTHORS | ||||||||||||
| Deposited By: | Tony Diaz | ||||||||||||
| Deposited On: | 26 Jan 2011 22:11 | ||||||||||||
| Last Modified: | 09 Nov 2021 15:58 |
Repository Staff Only: item control page
