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Conformal GaP layers on Si wire arrays for solar energy applications

Tamboli, Adele C. and Malhotra, Manav and Kimball, Gregory M. and Turner-Evans, Daniel B. and Atwater, Harry A. (2010) Conformal GaP layers on Si wire arrays for solar energy applications. Applied Physics Letters, 97 (22). Art. No. 221914 . ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20110106-082642400

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Abstract

We report conformal, epitaxial growth of GaP layers on arrays of Si microwires. Silicon wires grown using chlorosilane chemical vapor deposition were coated with GaP grown by metal-organic chemical vapor deposition. The crystalline quality of conformal, epitaxial GaP/Si wire arrays was assessed by transmission electron microscopy and x-ray diffraction. Hall measurements and photoluminescence show p- and n-type doping with high electron mobility and bright optical emission. GaP pn homojunction diodes on planar reference samples show photovoltaic response with an open circuit voltage of 660 mV.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.3522895 DOIArticle
http://apl.aip.org/resource/1/applab/v97/i22/p221914_s1PublisherArticle
http://link.aip.org/link/APPLAB/v97/i22/p221914/s1PublisherArticle
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2010 American Institute of Physics. Received 20 June 2010; accepted 10 November 2010; published online 3 December 2010. Funding for this work was provided by DARPA and the Caltech Center for Sustainable Energy Research. D.B.T.-E. acknowledges fellowship support from the NSF. The authors thank Nick Strandwitz, Carrie Hofmann, Carol Garland, and Emily Warmann for assistance with GaP processing and characterization.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Caltech Center for Sustainable Energy ResearchUNSPECIFIED
NSFUNSPECIFIED
Subject Keywords:electron mobility, elemental semiconductors, gallium compounds, Hall effect, III-V semiconductors, MOCVD, photoluminescence, photovoltaic effects, p-n junctions, semiconductor diodes, semiconductor doping, semiconductor epitaxial layers, semiconductor growth, silicon, transmission electron microscopy, X-ray diffraction
Issue or Number:22
Classification Code:PACS: 68.55.ag; 81.15.Gh; 81.05.Ea; 73.61.-r; 85.30.Kk; 78.66.-w
Record Number:CaltechAUTHORS:20110106-082642400
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20110106-082642400
Official Citation:Conformal GaP layers on Si wire arrays for solar energy applications Adele C. Tamboli, Manav Malhotra, Gregory M. Kimball, Daniel B. Turner-Evans, and Harry A. Atwater, Appl. Phys. Lett. 97, 221914 (2010), DOI:10.1063/1.3522895
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:21615
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:26 Jan 2011 22:11
Last Modified:03 Oct 2019 02:27

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