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Variation of impurity–to–band activation energies with impurity density

Lee, T. F. and McGill, T. C. (1975) Variation of impurity–to–band activation energies with impurity density. Journal of Applied Physics, 46 (1). pp. 373-380. ISSN 0021-8979.

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A theory of the variation of conduction electron density with the temperature for various impurity concentrations is presented. In addition to previously noted effects of condcution band edge lowering and screening of the impurity potential by the conduction electrons, the influence of a finite energy transfer integral and spatial fluctuation in the potential are included. The results show that for ND ~ ≥ 10^(17) cm^–3 in silicon one must not view the activation as occurring between a single impurity level and a well–defined conduction band edge, but must include the broadening of the impurity level and tailing of the conduction–band density of states. Calculations for the shallow donors P, Sb, and As in Si are found to be in satisfactory agreement with experiment.

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Additional Information:Copyright © 1975 American Institute of Physics. Received 16 August 1974. The authors would like to acknowledge J. W. Mayer’s contribution in calling to our attention some of the essential difficulties in interpreting Arrehnus plots for higher doping concentrations.
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Record Number:CaltechAUTHORS:LEEjap75a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2188
Deposited By: Tony Diaz
Deposited On:14 Mar 2006
Last Modified:02 Oct 2019 22:50

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