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Charging of single Si nanocrystals by atomic force microscopy

Boer, E. A. and Bell, L. D. and Brongersma, M. L. and Atwater, H. A. and Ostraat, M. L. and Flagan, R. C. (2001) Charging of single Si nanocrystals by atomic force microscopy. Applied Physics Letters, 78 (20). pp. 3133-3135. ISSN 0003-6951. doi:10.1063/1.1371783.

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Conducting-tip atomic force microscopy (AFM) has been used to electronically probe silicon nanocrystals on an insulating substrate. The nanocrystal samples were produced by aerosol techniques and size classified; nanocrystal size can be controlled in the size range of 2-50 nm with a size variation of less than 10%. Using a conducting tip, the charge was injected directly into the nanocrystals, and the subsequent dissipation of the charge was monitored. Estimates of the injected charge can be made by comparison of the data with an intermittent contact mode model of the AFM response to the electrostatic force produced by the stored charge.

Item Type:Article
Related URLs:
URLURL TypeDescription
Atwater, H. A.0000-0001-9435-0201
Flagan, R. C.0000-0001-5690-770X
Additional Information:© 2001 American Institute of Physics. Received 18 December 2000; accepted 19 March 2001. The research described in this paper was jointly sponsored by the National Aeronautics and Space Administration (NASA) and the Jet Propulsion Laboratory Director’s Research and Development Fund, and by the National Science Foundation under Grant No. DMR 98-71850.
Funding AgencyGrant Number
JPL Director's Research and Development FundUNSPECIFIED
NSFDMR 98-71850
Subject Keywords:silicon; elemental semiconductors; atomic force microscopy; nanostructured materials; surface charging
Issue or Number:20
Record Number:CaltechAUTHORS:BOEapl01
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2193
Deposited By: Tony Diaz
Deposited On:14 Mar 2006
Last Modified:29 Mar 2023 17:48

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