A Caltech Library Service

An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor

Zirath, Herbert and Rutledge, David B. (1999) An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor. IEEE Transactions on Microwave Theory and Techniques, 47 (12). pp. 2534-2538. ISSN 0018-9480. doi:10.1109/22.809003.

See Usage Policy.


Use this Persistent URL to link to this item:


In this paper, an lateral diffused metal-oxide-semiconductor-based very high-frequency class-E power amplifier has been investigated theoretically and experimentally. Simulations were verified by amplifier measurements and a record-high class-E output power was obtained at 144 MHz, which is in excellent agreement with simulations. The key of the results is the use of efficient device models, simulation tools, and the invention of a novel high-Q inductor for the output series resonance network. The latter allows for low losses in the output network and, simultaneously, a wide tuning range for maximum output power or maximum efficiency optimization.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© Copyright 1999 IEEE. Reprinted with permission. Manuscript received March 26, 1999; revised July 16, 1999. This work was supported by the Army Research Office and by D. Antsos, Jet Propulsion Laboratory, Pasadena, CA.
Subject Keywords:High efficiency, power amplifier
Issue or Number:12
Record Number:CaltechAUTHORS:ZIRieeetmtt99
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2206
Deposited By: Archive Administrator
Deposited On:15 Mar 2006
Last Modified:08 Nov 2021 19:46

Repository Staff Only: item control page