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Tunneling microscopy of 2H-MoS2: A compound semiconductor surface

Weimer, M. and Kramar, J. and Bai, C. and Baldeschwieler, J. D. (1988) Tunneling microscopy of 2H-MoS2: A compound semiconductor surface. Physical Review B, 37 (8). pp. 4292-4295. ISSN 0163-1829. doi:10.1103/PhysRevB.37.4292.

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Molybdenum disulfide, a layered semiconductor, is an interesting material to study with the tunneling microscope because two structurally and electronically different atomic species may be probed at its surface. We report on a vacuum scanning tunneling microscopy study of 2H-MoS2. Atomic resolution topographs and current images show the symmetry of the surface unit cell and clearly reveal two distinct atomic sites in agreement with the well-known x-ray crystal structure.

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Additional Information:©1988 The American Physical Society. Received 8 September 1987; revised manuscript received 23 December 1987. The authors are indebted to Ch. Gerber for guidance and to W. J. Kaiser for constant advice and encouragement. We have benefited from stimulating conversations with D. Denley, T. Coley, and W. A. Goddard III. This work was supported by the Office of Naval Research, under Contract No. N00014-86-K-0214, by the National Institutes of Health, under Contract No. RO1 GM37226-01, and by a gift from the Shell Companies Foundation.
Issue or Number:8
Record Number:CaltechAUTHORS:WEIprb88
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2276
Deposited By: Tony Diaz
Deposited On:21 Mar 2006
Last Modified:08 Nov 2021 19:46

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