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Accurate Band Gaps for Semiconductors from Density Functional Theory

Xiao, Hai and Tahir-Kheli, Jamil and Goddard, William A., III (2011) Accurate Band Gaps for Semiconductors from Density Functional Theory. Journal of Physical Chemistry Letters, 2 (3). pp. 212-217. ISSN 1948-7185.

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An essential issue in developing semiconductor devices for photovoltaics and thermoelectrics is to design materials with appropriate band gaps plus the proper positioning of dopant levels relative to the bands. Local density (LDA) and generalized gradient approximation (GGA) density functionals generally underestimate band gaps for semiconductors and sometimes incorrectly predict a metal. Hybrid functionals that include some exact Hartree-Fock exchange are known to be better. We show here for CuInSe_2, the parent compound of the promising CIGS Cu(In_xGa_(1-x))Se_2 solar devices, that LDA and GGA obtain gaps of 0.0-0.01 eV (experiment is 1.04 eV), while the historically first global hybrid functional, B3PW91, is surprisingly better than B3LYP with band gaps of 1.07 and 0.95 eV, respectively. Furthermore, we show that for 27 related binary and ternary semiconductors, B3PW91 predicts gaps with a mean average deviation (MAD) of only 0.09 eV, which is substantially better than all modern hybrid functionals.

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Xiao, Hai0000-0001-9399-1584
Goddard, William A., III0000-0003-0097-5716
Additional Information:© 2011 American Chemical Society. Received Date: November 18, 2010. Accepted Date: January 4, 2011. Published on Web Date: January 18, 2011. We thank Dr. Robert Haley of Dow-Solar for stimulating discussions. This work was supported by Dow-Solar, Midland, MI.
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Issue or Number:3
Record Number:CaltechAUTHORS:20110310-100110624
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:22800
Deposited By: Ruth Sustaita
Deposited On:11 Mar 2011 21:19
Last Modified:03 Oct 2019 02:40

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