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Noise suppression in a double-injection silicon diode

Nicolet, M.-A. and Bilger, H. R. and McCarter, E. R. (1966) Noise suppression in a double-injection silicon diode. Applied Physics Letters, 9 (12). pp. 434-436. ISSN 0003-6951. doi:10.1063/1.1754643.

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We measured the noise spectrum between 10 kHz and 10 MHz. In the region where I V2, we found a noise suppression factor of 1/2 for the white noise, i.e., I2 = (1/2)4kT(V/I)–Δf.

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Additional Information:Copyright © 1966 American Institute of Physics. Received 4 October 1966; revised 29 November 1966. Our thanks go to J. W. Mayer (Hughes Research Labs.) who very kindly supplied the diode for this investigation and to W. L. Hughes, head of the School of Electrical Engineering, Oklahoma State University, for his support and his hospitality to one of us (M-A. N.).
Issue or Number:12
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2307
Deposited By: Tony Diaz
Deposited On:25 Mar 2006
Last Modified:08 Nov 2021 19:46

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