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Void-mediated formation of Sn quantum dots in a Si matrix

Lei, Y. and Möck, P. and Topuria, T. and Browning, N. D. and Ragan, R. and Min, K. S. and Atwater, H. A. (2003) Void-mediated formation of Sn quantum dots in a Si matrix. Applied Physics Letters, 82 (24). pp. 4262-4264. ISSN 0003-6951.

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Atomic scale analysis of Sn quantum dots (QDs) formed during the molecular beam-epitaxy (MBE) growth of SnxSi1-x (0.05 less than or equal to x less than or equal to 0.1) multilayers in a Si matrix revealed a void-mediated formation mechanism. Voids below the Si surface are induced by the lattice mismatch strain between SnxSi1-x layers and Si, taking on their equilibrium tetrakaidecahedron shape. The diffusion of Sn atoms into these voids leads to an initial rapid coarsening of quantum dots during annealing. Since this formation process is not restricted to Sn, a method to grow QDs may be developed by controlling the formation of voids and the diffusion of materials into these voids during MBE growth.

Item Type:Article
Atwater, H. A.0000-0001-9435-0201
Additional Information:© 2003 American Institute of Physics. Received 19 February 2003; accepted 21 April 2003. This work was supported by NSF under Grant No. DMR-9733895 to N.D.B. and a grant to P.M. by CRB of UIC. The JEOL 2010F was purchased in part with support from NSF under Grant No. DMR-9601792. Nanocrystal synthesis and characterization at Caltech (H.A.A., R.R., and K.S.M.) was supported by NSF under Grant No. ECS-0103543.
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Subject Keywords:tin; semiconductor quantum dots; molecular beam epitaxial growth; voids (solid); electron energy loss spectra; annealing; field emission electron microscopy; scanning-transmission electron microscopy; nucleation; diffusion; elemental semiconductors; narrow band gap semiconductors; semiconductor growth
Record Number:CaltechAUTHORS:LEIapl03
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2308
Deposited By: Tony Diaz
Deposited On:25 Mar 2006
Last Modified:07 Oct 2017 03:44

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