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Short-Range Order and Pseudogaps in Elemental Amorphous Covalent Semiconductors

McGill, T. C. and Klima, J. (1972) Short-Range Order and Pseudogaps in Elemental Amorphous Covalent Semiconductors. Physical Review B, 5 (4). pp. 1517-1528. ISSN 0556-2805. doi:10.1103/PhysRevB.5.1517.

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The role of short-range order in producing a pseudogap in the density of states ρ(E) of an elemental amorphous material is investigated. An approximate expression for ρ(E) which emphasizes short-range order and neglects all long-range order is derived from multiple-scattering theory. This expression is used to study the influence of short-range order consisting of two atoms, a single bond, and eight atoms in the staggered and eclipsed bonding configurations on ρ(E). The results of numerical calculation for amorphous sp3-bonded C, amorphous Si, and amorphous Ge are reported. These results suggest that the pseudogap in ρ(E) may be attributed to the short-range order.

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Additional Information:©1972 The American Physical Society Received 2 August 1971 We would like to acknowledge the hospitality of the Department of Physics at the University of Bristol, where this work was carried out. We would particularly like to acknowledge Professor J. M. Ziman for suggesting this problem, for providing the stimulating atmosphere in which this work was completed, and for his constant encouragement and very useful criticism. We would also like to acknowledge many useful discussions with G. J. Morgan. Supported by a grant from the British Ministry of Technology. Supported in part by the Air Force Office of Scientific Research, under Contract No. F44620-71-C-0108. [T.C.M. was a] NATO Postdoctoral Fellow, 1969-1970; AFNRC Postdoctoral Fellow, 1970-1971.
Issue or Number:4
Record Number:CaltechAUTHORS:MCGprb72a
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ID Code:2329
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Deposited On:28 Mar 2006
Last Modified:08 Nov 2021 19:47

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