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Electrical interface barriers

McGill, T. C. and Mead, C. A. (1974) Electrical interface barriers. Journal of Vacuum Science and Technology, 11 (1). pp. 122-127. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:MCGjvst84b

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Abstract

A review of the phenomena associated with electrical barriers between metals, and insulators and semiconductors is presented. The observed phenomenological rules governing the value of the barrier energies for different metals on the same insulator or semiconductor are presented. The barrier energies on ionic insulators are shown to vary strongly with the metal. While in the case of covalent semiconductors, the barrier energies are relatively independent of the metal. The barrier energy from the metal to the conduction band of the semiconductor is shown to be approximately two-thirds of the semiconductor band gap with certain exceptions. Transport through interfacial barriers is illustrated by discussing the transport through metal–GaSe–metal structures and Mg–SiO_2 structures. Both thermal induced transport over the barrier and tunneling through the barriers are discussed.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1116/1.1318540DOIArticle
Additional Information:© 1974 American Vacuum Society. (Received 19 October 1973) Supported in part by AFOSR under Grant No. 73-2490. Supported in part by ONR under Grant No. N00014-67-A-0094-0017.
Funders:
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)73-2490
Office of Naval Research (ONR)N00014-67-A-0094-0017
Record Number:CaltechAUTHORS:MCGjvst84b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MCGjvst84b
Alternative URL:http://dx.doi.org/10.1116/1.1318540
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2333
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:28 Mar 2006
Last Modified:12 Jul 2019 20:10

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