A Caltech Library Service

Neutral impurity scattering in semiconductors

McGill, T. C. and Baron, R. (1975) Neutral impurity scattering in semiconductors. Physical Review B, 11 (12). pp. 5208-5210. ISSN 0556-2805. doi:10.1103/PhysRevB.11.5208.

See Usage Policy.


Use this Persistent URL to link to this item:


The drift mobility and ratio of Hall to drift mobility are computed for the scattering of carriers by a hydrogenic neutral impurity. The scattering is treated using the almost exact values of the phase shifts for scattering of electrons by neutral hydrogen scaled for the effective mass and dielectric constant of the semiconductor.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:©1975 The American Physical Society Received 2 December 1974 Work supported in part by Air Force Office of Scientific Research under Grant No. 73-2490. Alfred P. Sloan Foundation Fellow.
Issue or Number:12
Record Number:CaltechAUTHORS:MCGprb75
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2337
Deposited By: Archive Administrator
Deposited On:28 Mar 2006
Last Modified:08 Nov 2021 19:47

Repository Staff Only: item control page