A Caltech Library Service

Optical Reflection Studies of Damage in Ion Implanted Silicon

McGill, T. C. and Kurtin, S. L. and Shifrin, G. A. (1970) Optical Reflection Studies of Damage in Ion Implanted Silicon. Journal of Applied Physics, 41 (1). pp. 246-251. ISSN 0021-8979. doi:10.1103/PhysRevB.11.5208.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


Optical (3–6.5 eV) reflection spectra are presented for crystalline Si implanted at room temperature with 40 keV Sb ions to doses of less than 2×10¹⁵/cm². These spectra, and their deviation from the reflection spectrum of crystalline Si, are discussed in terms of a model based on the average dielectric properties of the implanted region. For samples having a high ion dose (>10¹⁵/cm²) the observed spectra resemble the spectra of sputtered Si films. Anneal characteristics of the reflection spectra are found to be dose dependent. These observations are compared to, and found to substantiate, the results of other experimental techniques for studying lattice damage in Si.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:©1975 The American Physical Society. Received 2 December 1974. The authors would like to acknowledge stimulating discussions with O. J. Marsh, J. W. Mayer, G. S. Picus, and R. W. Hellwarth during the course of this work. The authors would also like to thank R. Hart for providing the Sb implants; E. Wolf for performing scanning electron microscopy studies; and H. Garvin and M. Braunstein for providing sputtered Si layers.
Issue or Number:1
Record Number:CaltechAUTHORS:MCGjap70a
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2338
Deposited By: Archive Administrator
Deposited On:28 Mar 2006
Last Modified:02 Mar 2023 21:37

Repository Staff Only: item control page