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Hot-wire CVD-grown epitaxial Si films on Si (100) substrates and a model of epitaxial breakdown

Richardson, Christine E. and Mason, M. S. and Atwater, Harry A. (2006) Hot-wire CVD-grown epitaxial Si films on Si (100) substrates and a model of epitaxial breakdown. Thin Solid Films, 501 (1-2). pp. 332-334. ISSN 0040-6090. https://resolver.caltech.edu/CaltechAUTHORS:20110427-141120361

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Abstract

We have previously reported on the low-temperature (T = 300–475 °C) epitaxial growth of thin silicon films by hot-wire chemical vapor deposition on Si (100). We derived a phase diagram for Si epitaxy on Si (100). With dilute SiH4, epitaxial growth is seen until 50 nm thickness, while twinned epitaxial growth is seen even at 1 μm thickness. Computer simulation of HWCVD growth suggests that oxygen incorporation is responsible for epitaxial breakdown. The model predicts that the silicon to oxygen ratio decreases with temperature and dilution ratio during the growth of the first monolayer of silicon.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/j.tsf.2005.07.213DOIArticle
http://www.sciencedirect.com/science/article/B6TW0-4GX64MH-F/2/61caf0836ff96b5fb7068b13144ee525PublisherArticle
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2005 Elsevier B.V. Available online 19 August 2005.
Subject Keywords:low-temperature epitaxial growth; hot-wire vapor deposition; polycrystalline thin film Si
Issue or Number:1-2
Record Number:CaltechAUTHORS:20110427-141120361
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20110427-141120361
Official Citation:Christine E. Richardson, M.S. Mason, Harry A. Atwater, Hot-wire CVD-grown epitaxial Si films on Si (100) substrates and a model of epitaxial breakdown, Thin Solid Films, Volume 501, Issues 1-2, Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, 20 April 2006, Pages 332-334, ISSN 0040-6090, DOI: 10.1016/j.tsf.2005.07.213. (http://www.sciencedirect.com/science/article/B6TW0-4GX64MH-F/2/61caf0836ff96b5fb7068b13144ee525)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:23482
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:28 Apr 2011 20:55
Last Modified:03 Oct 2019 02:46

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