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Size tunable visible and near-infrared photoluminescence from vertically etched silicon quantum dots

Walavalkar, Sameer S. and Homyk, Andrew P. and Hofmann, Carrie E. and Henry, M. David and Shin, Claudia and Atwater, Harry A. and Scherer, Axel (2011) Size tunable visible and near-infrared photoluminescence from vertically etched silicon quantum dots. Applied Physics Letters, 98 (15). Art. No. 153114. ISSN 0003-6951. doi:10.1063/1.3580768.

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Corrugated etching techniques were used to fabricate size-tunable silicon quantum dots that luminesce under photoexcitation, tunable over the visible and near infrared. By using the fidelity of lithographic patterning and strain limited, self-terminating oxidation, uniform arrays of pillar containing stacked quantum dots as small as 2 nm were patterned. Furthermore, an array of pillars, with multiple similar sized quantum dots on each pillar, was fabricated and tested. The photoluminescence displayed a multiple, closely peaked emission spectra corresponding to quantum dots with a narrow size distribution. Similar structures can provide quantum confinement effects for future nanophotonic and nanoelectronic devices.

Item Type:Article
Related URLs:
URLURL TypeDescription DOIArticle
Walavalkar, Sameer S.0000-0002-7628-9600
Henry, M. David0000-0002-5201-0644
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2011 American Institute of Physics. Received 31 January 2011; accepted 31 March 2011; published online 14 April 2011. S. Walavalkar would like to thank Erika Garcia as well as Professor Tom Tombrello and Ryan Briggs for useful discussion. We would also like to gratefully acknowledge the Boeing corporation under the CT-BA-GTA-1 grant, the Advanced Energy Consortium under the BEG10-07 grant, and DARPA for generous support under the NACHOS Grant No. W911NF-07-1-0277 program. A. Homyk would like to thank the ARCS foundation for their support. M. D. Henry would like to thank the John and Fannie Hertz Foundation for their funding.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Boeing CorporationCT-BA-GTA-1
Advanced Energy ConsortiumBEG10-07
Defense Advanced Research Projects Agency (DARPA)W911NF-07-1-0277
Fannie and John Hertz FoundationUNSPECIFIED
Subject Keywords:elemental semiconductors, etching, lithography, oxidation, photoluminescence, semiconductor growth, semiconductor quantum dots, silicon
Issue or Number:15
Classification Code:PACS: 78.67.Hc; 81.07.Ta; 81.05.Cy; 81.65.Cf; 78.55.Ap
Record Number:CaltechAUTHORS:20110503-134956468
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:23534
Deposited By: Tony Diaz
Deposited On:03 May 2011 23:30
Last Modified:09 Nov 2021 16:15

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