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Floquet topological insulator in semiconductor quantum wells

Lindner, Netanel H. and Refael, Gil and Galitski, Victor (2011) Floquet topological insulator in semiconductor quantum wells. Nature Physics, 7 (6). pp. 490-495. ISSN 1745-2473. https://resolver.caltech.edu/CaltechAUTHORS:20110621-100028234

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Abstract

Topological phases of matter have captured our imagination over the past few years, with tantalizing properties such as robust edge modes and exotic non-Abelian excitations, and potential applications ranging from semiconductor spintronics to topological quantum computation. Despite recent advancements in the field, our ability to control topological transitions remains limited, and usually requires changing material or structural properties. We show, using Floquet theory, that a topological state can be induced in a semiconductor quantum well, initially in the trivial phase. This can be achieved by irradiation with microwave frequencies, without changing the well structure, closing the gap and crossing the phase transition. We show that the quasi-energy spectrum exhibits a single pair of helical edge states. We discuss the necessary experimental parameters for our proposal. This proposal provides an example and a proof of principle of a new non-equilibrium topological state, the Floquet topological insulator, introduced in this paper.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1038/nphys1926DOIUNSPECIFIED
http://www.nature.com/nphys/journal/v7/n6/full/nphys1926.htmlPublisherUNSPECIFIED
Additional Information:© 2011 Macmillan Publishers Limited. Received 02 September 2010. Accepted 14 January 2011. Published online 13 March 2011. We thank J. Avron, A. Auerbach, E. Berg, A. Bernevig, J. Eisenstein, L. Fidkowski, V. Gurarie, I. Klich, and A. Polkovnikov for illuminating conversations. This research was supported by DARPA (G.R., V.G.), NSF grants PHY-0456720 and PHY-0803371 (G.R., N.H.L.). N.H.L. acknowledges the financial support of the Rothschild Foundation and the Gordon and Betty Moore Foundation. Author contributions: N.H.L., G.R. and V.G. contributed to the conceptual developments. N.H.L. carried out the mathematical analysis.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
NSFPHY-0456720
NSFPHY-0803371
Rothschild FoundationUNSPECIFIED
Gordon and Betty Moore FoundationUNSPECIFIED
Subject Keywords:Condensed-matter physics; Materials physics
Issue or Number:6
Record Number:CaltechAUTHORS:20110621-100028234
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20110621-100028234
Official Citation:Floquet topological insulator in semiconductor quantum wells - pp490 - 495 Netanel H. Lindner, Gil Refael & Victor Galitski doi:10.1038/nphys1926
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:24150
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:21 Jun 2011 17:42
Last Modified:03 Oct 2019 02:53

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