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Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts

Michalak, David J. and Lewis, Nathan S. (2002) Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts. Applied Physics Letters, 80 (23). pp. 4458-4460. ISSN 0003-6951. doi:10.1063/1.1479456. https://resolver.caltech.edu/CaltechAUTHORS:MICapl02

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Abstract

Near-surface channel conductance measurements, differential capacitance versus potential measurements, and surface recombination velocity measurements have been performed on (111)- and (100)-oriented n-type Si samples in contact with nitrogen and/or liquid electrolyte solutions containing I2, I2/I–, ferrocene+/0, or decamethylferrocene+/0 in either methanol or tetrahydrofuran. Si/liquid contacts that displayed a low effective surface recombination velocity S corresponded to those that formed an inversion layer at the solid/liquid contact as indicated by channel conductance measurements or by differential capacitance versus potential measurements. Contacts that did not produce an inversion layer at the Si surface did not produce low effective S values. The observed behavior is consistent with the known energetics of Si/liquid contacts and provides an explanation for the low effective S values observed in these systems.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.1479456DOIArticle
ORCID:
AuthorORCID
Michalak, David J.0000-0002-1226-608X
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2002 American Institute of Physics. (Received 20 December 2001; accepted 20 March 2002) The authors acknowledge the National Science Foundation, Grant No. CHE-9974562, for support of this work.
Funders:
Funding AgencyGrant Number
NSFCHE-9974562
Subject Keywords:silicon; elemental semiconductors; semiconductor-electrolyte boundaries; surface conductivity; capacitance; inversion layers; surface recombination; organic compounds
Issue or Number:23
DOI:10.1063/1.1479456
Record Number:CaltechAUTHORS:MICapl02
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:MICapl02
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2425
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:03 Apr 2006
Last Modified:08 Nov 2021 19:47

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